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| Freescale Semiconductor Technical Data Document Number: MHW8222BN Rev. 6, 4/2006 LIFETIME BUY Features * Specified for 77 - , 110 - and 128 - Channel Loading * Excellent Distortion Performance * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier Module * Replaced MHW8222B. There are no form, fit or function changes with this part replacement. * RoHS Compliant MHW8222BN 860 MHz 22.7 dB GAIN 128 - CHANNEL CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating DC Supply Voltage RF Input Voltage (Single Tone) Operating Case Temperature Range Storage Temperature Range Symbol VCC Vin TC Tstg Value + 28 + 70 - 20 to +100 - 40 to +100 Unit Vdc dBmV C C Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = + 30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain Slope (f = 40 - 860 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = + 38 dBmV/ch; 128 Channels) (Vout = + 40 dBmV/ch; 110 Channels) (Vout = + 44 dBmV/ch; 77 Channels) (f = 40 - 860 MHz) f = 50 MHz f = 860 MHz Symbol BW Gp S GF IRL/ORL RLD CSO128 CSO110 CSO77 Min 40 21.4 21.8 0.1 -- 20 -- -- -- -- Typ -- 21.9 22.7 0.8 0.4 24 -- - 68 - 64 - 65 Max 860 22.4 24 1.5 0.6 -- 0.009 - 60 - 61 - 62 Unit MHz dB -- -- dB dB/MHz dBc Freescale Semiconductor, Inc., 2006. All rights reserved. MHW8222BN 1 RF Device Data Freescale Semiconductor LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 CATV Amplifier Module Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = + 30C, 75 system unless otherwise noted) (continued) Characteristic Cross Modulation Distortion (Vout = + 38 dBmV/ch, 128 - Channel @ Fm = 55.25 MHz) (Vout = + 40 dBmV/ch, 110- Channel @ Fm = 55.25 MHz) (Vout = + 44 dBmV/ch, 77 - Channel @ Fm = 55.25 MHz) Composite Triple Beat (Vout = + 38 dBmV/ch, 128 - Channels, Worst Case) (Vout = + 40 dBmV/ch, 110- Channels, Worst Case) (Vout = + 44 dBmV/ch, 77 - Channels, Worst Case) Noise Figure f = 50 MHz f = 750 MHz f = 860 MHz Symbol XMD128 XMD110 XMD77 CTB128 CTB110 CTB77 NF Min -- -- -- -- -- -- -- -- -- 180 Typ - 65 - 63 - 59 - 66 - 64 - 65 3.7 5 5.6 220 Max - 63 - 60 - 56 dBc - 64 - 61 - 62 4.5 6.5 7 240 dB Unit DC Current IDC mA MHW8222BN 2 RF Device Data Freescale Semiconductor LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 dBc LIFETIME BUY PACKAGE DIMENSIONS A Z J A S B V R 2X Q 0.010 M TF M A M NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. INCHES MIN MAX --- 1.775 --- 1.085 --- 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 --- 0.600 1.500 BSC 0.200 BSC --- 0.250 0.435 --- 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX --- 45.085 --- 27.559 --- 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279 F F L 2X 2X 6-32UNC-2B U 0.010 E M ZTA M 12 3 5 789 N C E K Z W DIM A B C D E F G J K L N P Q R S U V W X Y Z X T 2X 4X G 7X D M P X TA M Y M 0.020 X 0.010 M ZTA STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW8222BN RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. MHW8222BN 4Rev. 6, 4/2006 Document Number: MHW8222BN RF Device Data Freescale Semiconductor |
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